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MMBT8550
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. As complementary type the NPN transistor MMBT8050 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS
Value 40 25 6 600 350 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Collector Base Breakdown Voltage at -IC = 10 A Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 A Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA
Symbol MMBT8550C MMBT8550D hFE hFE hFE -ICBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT
Min. 100 160 40 40 25 6 -
Typ. 100
Max. 250 400 100 0.5 1.2 -
Unit nA V V V V V MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 11/04/2008
MMBT8550
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 11/04/2008

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